r07ds0465ej0200 rev.2.00 page 1 of 6 jun 15, 2011 preliminary datasheet RJP30H1DPD silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? high speed switching: t r = 80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v ce(sat) = 1.5 v typ. ? low leak current: i ces = 1 ? a max. outline renesas package code: prss0004zj-a ( package name : to-252) 1 3 2 4 g 1. gate 2. collector 3. emitter 4. collector (flange) c e absolute maximum ratings (tc = 25c) item symbol ratings unit collector to emitter voltage v ces 360 v gate to emitter voltage v ges 30 v collector current i c 30 a collector peak current ic(peak) note1 200 a collector dissipation p c note2 40 w junction to case thermal impedance ? j-c 3.13 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. tc = 25 ?c r07ds0465ej0200 rev.2.00 jun 15, 2011 www.datasheet.co.kr datasheet pdf - http://www..net/
RJP30H1DPD preliminary r07ds0465ej0200 rev.2.00 page 2 of 6 jun 15, 2011 electrical characteristics (tj = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 1 ? a v ce = 360 v, v ge = 0 gate to emitter leak current i ges ? ? 100 na v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 2.5 ? 5 v v ce = 10 v, i c = 1 ma collector to em itter saturation voltage v ce(sat) ? 1.5 2 v i c = 30a, v ge = 15 v note3 input capacitance cies ? 740 ? pf output capacitance coes ? 40 ? pf reveres transfer capacitance cres ? 17 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 23 ? nc gate to emitter charge qge ? 4 ? nc gate to collector charge qgc ? 8 ? nc v ge = 15 v v ce = 150 v i c = 30 a t d(on) ? 0.02 ? ? s t r ? 0.08 ? ? s t d(off) ? 0.04 ? ? s switching time t f ? 0.15 ? ? s i c = 30 a r l = 5 ? v ge = 15 v r g = 5 ? notes: 3. pulse test www.datasheet.co.kr datasheet pdf - http://www..net/
RJP30H1DPD preliminary r07ds0465ej0200 rev.2.00 page 3 of 6 jun 15, 2011 main characteristics typical output characteristics (2) typical transfer characteristics 200 160 120 80 40 246810 typical output characteristics (1) 100 80 60 40 20 12345 ta = 25 c pulse test ta = 25 c pulse test 5.5 v 6.5 v 7.5 v 7 v 6 v 6 v 7 v 8 v 9 v collector current i c (a) collector current i c (a) collector current i c (a) collector current i c (a) collector current i c (a) maximum safe operation area 0 0 50 40 30 20 10 0 0 0 0 246810 collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage vs. collector current (typical) collector to emitter saturation voltage v ce(sat) (v) collector to emitter saturation voltage v ce(sat) (v) 0.1 1 10 1 10 100 v ge = 5 v v ge = 5 v v ce = 10 v pulse test collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) gate to emitter voltage v ge (v) tc = 75 c 25c ?25c 10 v 8 v 9 v 12 v 10 v 11 v 15 v 15 v 0 04812 20 16 i c = 30 a 60 a 90 a pulse test ta = 25 c 1 2 4 3 5 v ge = 15 v pulse test 25c 75c tc = ?25 c 1000 100 10 0.1 1 10 100 1 0.01 0.1 1000 10 s ta = 25 c 1 shot pulse 14 v pw = 100 s www.datasheet.co.kr datasheet pdf - http://www..net/
RJP30H1DPD preliminary r07ds0465ej0200 rev.2.00 page 4 of 6 jun 15, 2011 capacitance c (pf) 1 100 1000 10000 0 20406080100 typical capacitance vs. colloctor to emitter voltage colloctor to emitter voltage v ce (v) gate resistance rg () t f t d(off) t r t d(on) 10 100 1000 switching characteristics (typical) (1) switching characteristics (typical) (2) switching time t (ns) switching time t (ns) colloctor current i c (a) 1 10 100 1 10 100 t r 10 100 1000 i c = 30 a, v ge = 15 v r l = 5 , ta = 25c t d(off) t f t d(on) v cc = 150 v, v ge = 15 v rg = 5 , ta = 25c switching characteristics (typical) (3) switching time t (ns) case temperature tc (c) 10 100 1000 050 25 10075 125 150 i c = 30 a, v ge = 15 v r l = 5 , rg = 5 t f t d(off) t d(on) t r cies coes cres v ge = 0 v, f = 1 mhz ta = 25 c 10 gate charge qg (nc) dynamic input characteristics (typical) colloctor to emitter voltage v ce (v) gate to emitter voltage v ge (v) 800 600 400 200 0 0 16 12 8 4 0 816243240 v ge v cc = 150 v i c = 30 a ta = 25 c v ce www.datasheet.co.kr datasheet pdf - http://www..net/
RJP30H1DPD preliminary r07ds0465ej0200 rev.2.00 page 5 of 6 jun 15, 2011 waveform ic monitor vin monitor d.u.t.. rg vin = 15 v v cc 10% t r ic vin 90% 90% 90% 10% 10% r l 1 m 10 m 100 m 1 10 pulse width pw (s) 1 0.3 3 0.1 0.03 0.01 10 normalized transient thermal impedance vs. pulse width switching time test circuit t d(on) t d(off) t f t on t off p dm pw t d = pw t d = 1 0.5 0.2 0.1 0.05 0.02 0.01 tc = 25 c 1shot pulse www.datasheet.co.kr datasheet pdf - http://www..net/
RJP30H1DPD preliminary r07ds0465ej0200 rev.2.00 page 6 of 6 jun 15, 2011 package dimensions 6.5 0.3 (5.6 0.5) 2.3 0.2 0.55 0.1 0.25 max 0.55 0.1 1.5 0.5 5.5 0.5 2.5 0.5 0.8 0.1 (1.2) 2.29 0.52 .29 0.5 1.2 max (5.1) (5.1) unit: mm 0.319 g mass[t y p. ] pr ss000 4z j - a rene s a s c od e jeita packa g e cod e previous c ode packa g e nam e t o -2 52 ordering information orderable part number quan tity shipping container RJP30H1DPD-00-j2 3000 pcs taping www.datasheet.co.kr datasheet pdf - http://www..net/
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